3 edition of Advanced development of double-injection, deep-impurity semiconductor switches found in the catalog.
Advanced development of double-injection, deep-impurity semiconductor switches
by Westinghouse R&D Center, National Aeronautics and Space Administration, For sale by the National Technical Information Service in Pittsburgh, Penn, [Washington, DC, Springfield, Va
Written in English
|Other titles||Advanced development of double injection, deep impurity semiconductor switches.|
|Series||NASA contractor report -- NASA CR-182118.|
|Contributions||United States. National Aeronautics and Space Administration.|
|The Physical Object|
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Get this from a library. Advanced development of double-injection, deep-impurity semiconductor switches: final technical report for the period J to Decem [M H Hanes; United States. National Aeronautics and Space Administration.].
Buy Advanced development of double-injection, deep-impurity semiconductor switches final technical report for the period J to Decem (SuDoc NAS ) by Hanes, M.
(ISBN:) from Amazon's Book Store. Everyday low prices and free delivery on eligible : M. Hanes. Advanced development of double-injection, deep-impurity semiconductor switches eBook: National Aeronautics and Space Administration NASA: : Kindle StoreAuthor: National Aeronautics and Space Administration NASA.
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Advanced development of double-injection, deep-impurity semiconductor switches (English Edition) eBook: National Aeronautics and Space Administration NASA: : Kindle-ShopFormat: Kindle. Double injection theory Advanced development of double-injection semi-insulators (semiconductors) containing deep acceptor impurities and a small density of shallow donors is extended to include the effects of gradients in the deep.
The Silicon P-n-p-n Switch and Controlled Rectifier. of 9. Share & Embed. Titanium in silicon as a deep level impurity. NASA Technical Reports Server (NTRS) Chen, J.-W.; Milnes, A. G.; Rohatgi, A. Titanium inserted in silicon by diffusion or.
Download Citation | A Voltage Model of PIN Diodes at Reverse Recovery under Short-Time Freewheeling | Fast switching and large capacity in modern power converters generate large-voltage peak. Energy-band diagram for a double-injection device with a deep-level impurity. the Fermi level, no and p o are the thermal equilibrium concentrations of electrons and holes, respectively, N, and N A are the concentrations of shallow donors and acceptors, respectively, and NR is the concentration of deep impurity-recombination by: 9.
Deep Impurity States in Gallium Arsenide. DTIC Science & Technology. that the wave functions of the so-called slal- is a result of a delicate cancellation process in l. This banner text can have markup. web; books; video; audio; software; images; Toggle navigation.
The Silicon P-n-p-n Switch and Controlled Rectifier - Free download as PDF File .pdf), Text File .txt) or read online for free. The Silicon P-n-p-n Switch and Controlled Rectifier. Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization SEMICONDUCTORS AND SEMIMETALS Volume 46 Volume Editors CONSTANTINOS CHRISTOFIDES DEPARTMENT OF NATURAL SCIENCES UNIVERSITY O F CYPRUS NICOSIA, CYPRUS GERARD GHIBAUDO LABORATOIRE DE PHYSIQUE DES COMPOSANTS A.
Nonlinear Spatio-Temporal Dynamics and Chaos in Semiconductors deals with complex nonlinear dynamics, pattern formation, and chaotic behavior in such systems. In doing so it bridges the gap between two well-established ﬁelds: the theory of dynamic systems, and nonlinear charge transport in.
A workshop on aircraft electric secondary power was held at the Lewis Research Center of the NationalAeronautics and Space AdministraLionon September 14 The purpose of this workshop was to discuss the technologiesrelated to aircraft power systems with a view toward aircraft in which all secondary power is supplied electrically.
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